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ECH8651R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
24
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=5A
0.5
5.5
9.5
1.3
V
S
RDS(on)1
ID=5A, VGS=4.5V
7
10.5
14
m Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
RDS(on)4
ID=5A, VGS=4.0V
ID=5A, VGS=3.1V
ID=2.5A, VGS=2.5V
7.2
7.5
9
11
12.5
15
15
17.5
21
m Ω
m Ω
m Ω
Turn-ON Delay Time
td(on)
300
ns
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
tr
td(off)
tf
Qg
Qgs
Qgd
See speci ? ed Test Circuit.
VDS=10V, VGS=10V, ID=10A
1000
4000
2500
24
2
4.5
ns
ns
ns
nC
nC
nC
Diode Forward Voltage
VSD
IS=10A, VGS=0V
0.77
1.2
V
Switching Time Test Circuit
4.5V
0V
VIN
VIN
VDD=10V
ID=5A
RL=2 Ω
PW=10 μ s
D.C. ≤ 1%
P.G
G
50 Ω
Rg
D
S
VOUT
ECH8651R
Rg=1k Ω
Ordering Information
Device
ECH8651R-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1010-2/7
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相关代理商/技术参数
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